Chemical compound

Gallium(I) oxide, digallium monoxide or gallium suboxide is an inorganic compound with the formula Ga2O.

Production

Gallium(I) oxide can be produced by reacting gallium(III) oxide with heated gallium in vacuum:[4]

It can also be obtained by reacting gallium with carbon dioxide in vacuum at 850 °C.[5]

Gallium(I) oxide is a by-product in the production of gallium arsenide wafers:[6][7]

Properties

Gallium(I) oxide is a brown-black diamagnetic solid which is resistant to further oxidation in dry air. It starts decomposing upon heating at temperatures above 500 °C, and the decomposition rate depends on the atmosphere (vacuum, inert gas, air).[4]

References

  1. ^ a b c d Haynes, William M., ed. (2011). CRC Handbook of Chemistry and Physics (92nd ed.). Boca Raton, FL: CRC Press. p. 4.64. ISBN 1-4398-5511-0.
  2. ^ Haynes, William M., ed. (2011). CRC Handbook of Chemistry and Physics (92nd ed.). Boca Raton, FL: CRC Press. p. 4.133. ISBN 1-4398-5511-0.
  3. ^ Haynes, William M., ed. (2011). CRC Handbook of Chemistry and Physics (92nd ed.). Boca Raton, FL: CRC Press. p. 5.12. ISBN 1-4398-5511-0.
  4. ^ a b Brauer, Georg (1975). Handbuch der Präparativen Anorganischen Chemie. Vol. 3. p. 857. ISBN 3-432-02328-6.
  5. ^ Emeléus, H. J. and Sharpe, A. G. (1963). Advances in Inorganic Chemistry and Radiochemistry. Vol. 5. Academic Press. p. 94. ISBN 008057854-3.{{cite book}}: CS1 maint: multiple names: authors list (link)
  6. ^ Siffert, Paul and Krimmel, Eberhard (2004). Silicon: Evolution and Future of a Technology. Springer. p. 439. ISBN 354040546-1.{{cite book}}: CS1 maint: multiple names: authors list (link)
  7. ^ Chou, L. -J (2007). Nanoscale One-dimensional Electronic and Photonic Devices (NODEPD). The Electrochemical Society. p. 47. ISBN 978-156677574-8.